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IPD30N08S2L21ATMA1
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IPD30N08S2L21ATMA1

Manufacturer: Infineon Technologies In Stock 13845 pcs

Datasheet: IPD30N08S2L21ATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 75V 30A TO252-3 $1.46
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2V @ 80µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
20.5mOhm @ 25A, 10V
Power Dissipation (Max)
136W (Tc)
Supplier Device Package
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs
72nC @ 10V
Drain to Source Voltage (Vdss)
75V
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V