IPD135N08N3GATMA1
Manufacturer: | Infineon Technologies |
In Stock 150 pcs
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Datasheet: | IPD135N08N3GATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 80V 45A | $0.98 |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Cut Tape (CT)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 3.5V @ 33µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 13.5mOhm @ 45A, 10V
- Power Dissipation (Max)
- 79W (Tc)
- Supplier Device Package
- PG-TO252-3
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Drain to Source Voltage (Vdss)
- 80V
- Input Capacitance (Ciss) (Max) @ Vds
- 1730pF @ 40V
- Current - Continuous Drain (Id) @ 25°C
- 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V