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IPD079N06L3GBTMA1
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IPD079N06L3GBTMA1

Manufacturer: Infineon Technologies In Stock 1184 pcs

Datasheet: IPD079N06L3GBTMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 60V 50A TO252-3 Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2.2V @ 34µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
7.9mOhm @ 50A, 10V
Power Dissipation (Max)
79W (Tc)
Supplier Device Package
PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs
29nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
4900pF @ 30V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V