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IPB65R660CFDAATMA1
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IPB65R660CFDAATMA1

Manufacturer: Infineon Technologies In Stock 0 pcs

Datasheet: IPB65R660CFDAATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH TO263-3 $1.03
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Product Parameter

Series
Automotive, AEC-Q101, CoolMOS™
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4.5V @ 200µA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
660mOhm @ 3.2A, 10V
Power Dissipation (Max)
62.5W (Tc)
Supplier Device Package
D²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
543pF @ 100V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V