IPB65R660CFDAATMA1
| Manufacturer: | Infineon Technologies |
In Stock 0 pcs
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| Datasheet: | IPB65R660CFDAATMA1 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CH TO263-3 | $1.03 | |
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Product Parameter
- Series
- Automotive, AEC-Q101, CoolMOS™
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4.5V @ 200µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 660mOhm @ 3.2A, 10V
- Power Dissipation (Max)
- 62.5W (Tc)
- Supplier Device Package
- D²PAK (TO-263AB)
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 543pF @ 100V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
Lanka Micro