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IPB60R099C7ATMA1
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IPB60R099C7ATMA1

Manufacturer: Infineon Technologies In Stock 890 pcs

Datasheet: IPB60R099C7ATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 650V 22A TO263-3 Inquiry
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Product Parameter

Series
CoolMOS™ C7
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Vgs(th) (Max) @ Id
4V @ 490µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
99mOhm @ 9.7A, 10V
Power Dissipation (Max)
110W (Tc)
Supplier Device Package
PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
1819pF @ 400V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V