IPB60R099C7ATMA1
Manufacturer: | Infineon Technologies |
In Stock 890 pcs
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Datasheet: | IPB60R099C7ATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 650V 22A TO263-3 | Inquiry |
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Product Parameter
- Series
- CoolMOS™ C7
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
- Vgs(th) (Max) @ Id
- 4V @ 490µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 99mOhm @ 9.7A, 10V
- Power Dissipation (Max)
- 110W (Tc)
- Supplier Device Package
- PG-TO263-3
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Input Capacitance (Ciss) (Max) @ Vds
- 1819pF @ 400V
- Current - Continuous Drain (Id) @ 25°C
- 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V