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IPB180N08S402ATMA1
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IPB180N08S402ATMA1

Manufacturer: Infineon Technologies In Stock 146 pcs

Datasheet: IPB180N08S402ATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH TO263-7 $5.06
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Product Parameter

Series
Automotive, AEC-Q101, OptiMOS™
FET Type
N-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ Id
4V @ 220µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
2.2mOhm @ 100A, 10V
Power Dissipation (Max)
277W (Tc)
Supplier Device Package
PG-TO263-7-3
Gate Charge (Qg) (Max) @ Vgs
167nC @ 10V
Drain to Source Voltage (Vdss)
80V
Input Capacitance (Ciss) (Max) @ Vds
11550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V