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IPB107N20N3GATMA1
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IPB107N20N3GATMA1

Manufacturer: Infineon Technologies In Stock 2997 pcs

Datasheet: IPB107N20N3GATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 88A TO263-3 Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
4V @ 270µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
10.7mOhm @ 88A, 10V
Power Dissipation (Max)
300W (Tc)
Supplier Device Package
D²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V