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IPB039N10N3GATMA1
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IPB039N10N3GATMA1

Manufacturer: Infineon Technologies In Stock 2000 pcs

Datasheet: IPB039N10N3GATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 100V 160A TO263-7 Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Vgs(th) (Max) @ Id
3.5V @ 160µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
3.9mOhm @ 100A, 10V
Power Dissipation (Max)
214W (Tc)
Supplier Device Package
PG-TO263-7
Gate Charge (Qg) (Max) @ Vgs
117nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
8410pF @ 50V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V