Lanka Micro
IPB025N10N3GE8187ATMA1
| Manufacturer: | Infineon Technologies |
In Stock 0 pcs
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| Datasheet: | IPB025N10N3GE8187ATMA1 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CH 100V 180A TO263-7 | $2.97 | |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Not For New Designs
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab)
- Vgs(th) (Max) @ Id
- 3.5V @ 275µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 100A, 10V
- Power Dissipation (Max)
- 300W (Tc)
- Supplier Device Package
- PG-TO263-7
- Gate Charge (Qg) (Max) @ Vgs
- 206nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 14800pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 180A
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V