IPB025N08N3GATMA1
Manufacturer: | Infineon Technologies |
In Stock 1459 pcs
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Datasheet: | IPB025N08N3GATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 80V 120A TO263-3 | Inquiry |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3.5V @ 270µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.5mOhm @ 100A, 10V
- Power Dissipation (Max)
- 300W (Tc)
- Supplier Device Package
- D²PAK (TO-263AB)
- Gate Charge (Qg) (Max) @ Vgs
- 206nC @ 10V
- Drain to Source Voltage (Vdss)
- 80V
- Input Capacitance (Ciss) (Max) @ Vds
- 14200pF @ 40V
- Current - Continuous Drain (Id) @ 25°C
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V