Menu Navigation

IPB019N06L3GATMA1
Images are for reference only. See Product Specifications for product details
thumb-0

IPB019N06L3GATMA1

Manufacturer: Infineon Technologies In Stock 1772 pcs

Datasheet: IPB019N06L3GATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 60V 120A TO263-3 Inquiry
Fill out the below form and we will contact you as soon as possible.

Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
2.2V @ 196µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
1.9mOhm @ 100A, 10V
Power Dissipation (Max)
250W (Tc)
Supplier Device Package
D²PAK (TO-263AB)
Gate Charge (Qg) (Max) @ Vgs
166nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
28000pF @ 30V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V