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BSZ0904NSIATMA1
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BSZ0904NSIATMA1

Manufacturer: Infineon Technologies In Stock 2766 pcs

Datasheet: BSZ0904NSIATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 30V 40A TSDSON Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Body)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4mOhm @ 30A, 10V
Power Dissipation (Max)
2.1W (Ta), 37W (Tc)
Supplier Device Package
PG-TSDSON-8-FL
Gate Charge (Qg) (Max) @ Vgs
11nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
1463pF @ 15V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V