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BSZ086P03NS3EGATMA1
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BSZ086P03NS3EGATMA1

Manufacturer: Infineon Technologies In Stock 14963 pcs

Datasheet: BSZ086P03NS3EGATMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET P-CH 30V 40A TSDSON-8 $0.87
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Product Parameter

Series
OptiMOS™
FET Type
P-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
3.1V @ 105µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8.6mOhm @ 20A, 10V
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)
Supplier Device Package
PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs
57.5nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
4785pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V