BSP317PE6327
| Manufacturer: | Infineon Technologies |
In Stock 0 pcs
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| Datasheet: | BSP317PE6327 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET P-CH 250V 0.43A SOT223 | Inquiry | |
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Product Parameter
- Series
- SIPMOS®
- FET Type
- P-Channel
- Packaging
- Cut Tape (CT)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 2V @ 370µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4Ohm @ 430mA, 10V
- Power Dissipation (Max)
- 1.8W (Ta)
- Supplier Device Package
- PG-SOT223-4
- Gate Charge (Qg) (Max) @ Vgs
- 15.1nC @ 10V
- Drain to Source Voltage (Vdss)
- 250V
- Input Capacitance (Ciss) (Max) @ Vds
- 262pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
Lanka Micro