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BSP299H6327XUSA1
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BSP299H6327XUSA1

Manufacturer: Infineon Technologies In Stock 23129 pcs

Datasheet: BSP299H6327XUSA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 500V 0.4A SOT-223 Inquiry
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Product Parameter

Series
SIPMOS®
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Not For New Designs
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4Ohm @ 400mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Supplier Device Package
PG-SOT223-4
Drain to Source Voltage (Vdss)
500V
Input Capacitance (Ciss) (Max) @ Vds
400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V