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BSP297H6327XTSA1
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BSP297H6327XTSA1

Manufacturer: Infineon Technologies In Stock 10791 pcs

Datasheet: BSP297H6327XTSA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 200V 660MA SOT-223 $0.82
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Product Parameter

Series
SIPMOS®
FET Type
N-Channel
Packaging
Cut Tape (CT)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id
1.8V @ 400µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Power Dissipation (Max)
1.8W (Ta)
Supplier Device Package
PG-SOT223-4
Gate Charge (Qg) (Max) @ Vgs
16.1nC @ 10V
Drain to Source Voltage (Vdss)
200V
Input Capacitance (Ciss) (Max) @ Vds
357pF @ 25V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V