BSC160N10NS3GATMA1
Manufacturer: | Infineon Technologies |
In Stock 20000 pcs
|
|
---|---|---|---|
Datasheet: | BSC160N10NS3GATMA1 | ||
Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
Description: | MOSFET N-CH 100V 42A TDSON-8 | $0.42 |
Fill out the below form and we will contact you as soon as possible.
Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Tape & Reel (TR)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 3.5V @ 33µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 16mOhm @ 33A, 10V
- Power Dissipation (Max)
- 60W (Tc)
- Supplier Device Package
- PG-TDSON-8-1
- Gate Charge (Qg) (Max) @ Vgs
- 25nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 1700pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 8.8A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V