BSB056N10NN3GXUMA1
| Manufacturer: | Infineon Technologies |
In Stock 22730 pcs
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| Datasheet: | BSB056N10NN3GXUMA1 | ||
| Product Category: | Transistors - FETs, MOSFETs - Single | Reference Price (In US Dollars) | 1pcs |
| Description: | MOSFET N-CH 100V 9A WDSON-2 | Inquiry | |
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Product Parameter
- Series
- OptiMOS™
- FET Type
- N-Channel
- Packaging
- Digi-Reel®
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- FET Feature
- -
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- 3-WDSON
- Vgs(th) (Max) @ Id
- 3.5V @ 100µA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5.6mOhm @ 30A, 10V
- Power Dissipation (Max)
- 2.8W (Ta), 78W (Tc)
- Supplier Device Package
- MG-WDSON-2, CanPAK M™
- Gate Charge (Qg) (Max) @ Vgs
- 74nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Input Capacitance (Ciss) (Max) @ Vds
- 5500pF @ 50V
- Current - Continuous Drain (Id) @ 25°C
- 9A (Ta), 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
Lanka Micro