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BSB056N10NN3GXUMA1
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BSB056N10NN3GXUMA1

Manufacturer: Infineon Technologies In Stock 22730 pcs

Datasheet: BSB056N10NN3GXUMA1
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 100V 9A WDSON-2 Inquiry
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Product Parameter

Series
OptiMOS™
FET Type
N-Channel
Packaging
Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
3-WDSON
Vgs(th) (Max) @ Id
3.5V @ 100µA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
5.6mOhm @ 30A, 10V
Power Dissipation (Max)
2.8W (Ta), 78W (Tc)
Supplier Device Package
MG-WDSON-2, CanPAK M™
Gate Charge (Qg) (Max) @ Vgs
74nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
5500pF @ 50V
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V