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IXTY1R4N120PHV
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IXTY1R4N120PHV

Manufacturer: IXYS In Stock 0 pcs

Datasheet: IXTY1R4N120PHV
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH $1.33
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Product Parameter

Series
Polar™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4.5V @ 100µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
13Ohm @ 700mA, 10V
Power Dissipation (Max)
86W (Tc)
Supplier Device Package
TO-252
Gate Charge (Qg) (Max) @ Vgs
24.8nC @ 10V
Drain to Source Voltage (Vdss)
1200V
Input Capacitance (Ciss) (Max) @ Vds
666pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V