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IXTH3N200P3HV
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IXTH3N200P3HV

Manufacturer: IXYS In Stock 30 pcs

Datasheet: IXTH3N200P3HV
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 2000V 3A TO-247 $20.98
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
5V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
8Ohm @ 1.5A, 10V
Power Dissipation (Max)
520W (Tc)
Supplier Device Package
TO-247
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Drain to Source Voltage (Vdss)
2000V
Input Capacitance (Ciss) (Max) @ Vds
1860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V