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IXTH200N10T
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IXTH200N10T

Manufacturer: IXYS In Stock 140 pcs

Datasheet: IXTH200N10T
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH 100V 200A TO-247 $6.02
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Product Parameter

Series
TrenchMV™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.5V @ 250µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 50A, 10V
Power Dissipation (Max)
550W (Tc)
Supplier Device Package
TO-247 (IXTH)
Gate Charge (Qg) (Max) @ Vgs
152nC @ 10V
Drain to Source Voltage (Vdss)
100V
Input Capacitance (Ciss) (Max) @ Vds
9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V