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IXFN50N120SIC
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IXFN50N120SIC

Manufacturer: IXYS In Stock 0 pcs

Datasheet: IXFN50N120SIC
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH $52.99
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Product Parameter

Series
-
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+20V, -5V
Technology
SiC (Silicon Carbide Junction Transistor)
FET Feature
-
Part Status
Active
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id
2.2V @ 2mA
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V
Power Dissipation (Max)
-
Supplier Device Package
SOT-227B
Gate Charge (Qg) (Max) @ Vgs
100nC @ 20V
Drain to Source Voltage (Vdss)
1200V
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 1000V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V