IXFK34N80

Product Parameter

Series

HiPerFET™

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

±20V

Technology

MOSFET (Metal Oxide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Vgs(th) (Max) @ Id

5V @ 8mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

240mOhm @ 17A, 10V

Power Dissipation (Max)

560W (Tc)

Supplier Device Package

TO-264AA (IXFK)

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Drain to Source Voltage (Vdss)

800V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V