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IXFH80N65X2-4

Manufacturer: IXYS In Stock 25 pcs

Datasheet: IXFH80N65X2-4
Product Category: Transistors - FETs, MOSFETs - Single Reference Price (In US Dollars) 1pcs
Description: MOSFET N-CH $11.8
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Product Parameter

Series
HiPerFET™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
FET Feature
-
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-4
Vgs(th) (Max) @ Id
5V @ 4mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
38mOhm @ 500mA, 10V
Power Dissipation (Max)
890W (Tc)
Supplier Device Package
TO-247-4L
Gate Charge (Qg) (Max) @ Vgs
140nC @ 10V
Drain to Source Voltage (Vdss)
650V
Input Capacitance (Ciss) (Max) @ Vds
8300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V