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GPA030A135MN-FDR
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GPA030A135MN-FDR

Manufacturer: Global Power Technologies Group In Stock 0 pcs

Datasheet: GPA030A135MN-FDR
Product Category: Transistors - IGBTs - Single Reference Price (In US Dollars) 1pcs
Description: IGBT 1350V 60A 329W TO3PN $2.39
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Product Parameter

Series
-
IGBT Type
Trench Field Stop
Packaging
Tube
Input Type
Standard
Gate Charge
300nC
Part Status
Active
Power - Max
329W
Mounting Type
Through Hole
Package / Case
TO-3
Test Condition
600V, 30A, 5Ohm, 15V
Switching Energy
4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C
30ns/145ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-3PN
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Reverse Recovery Time (trr)
450ns
Current - Collector (Ic) (Max)
60A
Current - Collector Pulsed (Icm)
90A
Voltage - Collector Emitter Breakdown (Max)
1350V