EPC2014

Product Parameter

Series

eGaN®

FET Type

N-Channel

Packaging

Cut Tape (CT)

Vgs (Max)

+6V, -5V

Technology

GaNFET (Gallium Nitride)

FET Feature

-

Part Status

Discontinued at Digi-Key

Mounting Type

Surface Mount

Package / Case

Die

Vgs(th) (Max) @ Id

2.5V @ 2mA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 5V

Power Dissipation (Max)

-

Supplier Device Package

Die Outline (5-Solder Bar)

Gate Charge (Qg) (Max) @ Vgs

2.8nC @ 5V

Drain to Source Voltage (Vdss)

40V

Input Capacitance (Ciss) (Max) @ Vds

325pF @ 20V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V