CMF20120D

Product Parameter

Series

Z-FET™

FET Type

N-Channel

Packaging

Tube

Vgs (Max)

+25V, -5V

Technology

SiCFET (Silicon Carbide)

FET Feature

-

Part Status

Obsolete

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 135°C (TJ)

Rds On (Max) @ Id, Vgs

110mOhm @ 20A, 20V

Power Dissipation (Max)

215W (Tc)

Supplier Device Package

TO-247-3

Gate Charge (Qg) (Max) @ Vgs

90.8nC @ 20V

Drain to Source Voltage (Vdss)

1200V

Input Capacitance (Ciss) (Max) @ Vds

1915pF @ 800V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V